onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 4.5 A, 60 V Enhancement, 8-Pin SOIC

RS Stock No.: 166-3247Brand: onsemiManufacturers Part No.: FDS4559
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Technical Document

Specifications

Brand

onsemi

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12.5nC

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

2W

Maximum Operating Temperature

175°C

Transistor Configuration

Isolated

Width

4 mm

Height

1.5mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Product details

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stock information temporarily unavailable.

₹ 102,325.00

₹ 40.93 Each (On a Reel of 2500) (Exc. GST)

₹ 120,743.50

₹ 48.297 Each (On a Reel of 2500) (inc. GST)

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 4.5 A, 60 V Enhancement, 8-Pin SOIC

Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 102,325.00

₹ 40.93 Each (On a Reel of 2500) (Exc. GST)

₹ 120,743.50

₹ 48.297 Each (On a Reel of 2500) (inc. GST)

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 4.5 A, 60 V Enhancement, 8-Pin SOIC

Stock information temporarily unavailable.

sticker-1112

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

55mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12.5nC

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

2W

Maximum Operating Temperature

175°C

Transistor Configuration

Isolated

Width

4 mm

Height

1.5mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Product details

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more