N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G

RS Stock No.: 172-8986Brand: onsemiManufacturers Part No.: NTMFS6H801NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm

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₹ 195.41

Each (In a Pack of 5) (Exc. GST)

₹ 230.584

Each (In a Pack of 5) (Including GST)

N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G
Select packaging type
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 195.41

Each (In a Pack of 5) (Exc. GST)

₹ 230.584

Each (In a Pack of 5) (Including GST)

N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN onsemi NTMFS6H801NT1G
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 5₹ 195.41₹ 977.05
10 - 95₹ 158.06₹ 790.30
100 - 245₹ 129.84₹ 649.20
250 - 495₹ 128.18₹ 640.90
500+₹ 115.70₹ 578.50

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

166 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Width

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm