Dual N-Channel MOSFET, 25 A, 24 V Depletion, 10-Pin WLCSP ON Semiconductor EFC4K110NUZTDG

RS Stock No.: 195-2486Brand: onsemiManufacturers Part No.: EFC4K110NUZTDG
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

24 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±12 V

Width

2.13mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.23mm

Typical Gate Charge @ Vgs

49 nC @ 4.5 V nC

Height

0.17mm

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P.O.A.

Dual N-Channel MOSFET, 25 A, 24 V Depletion, 10-Pin WLCSP ON Semiconductor EFC4K110NUZTDG
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

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P.O.A.

Dual N-Channel MOSFET, 25 A, 24 V Depletion, 10-Pin WLCSP ON Semiconductor EFC4K110NUZTDG
Stock information temporarily unavailable.
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

24 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±12 V

Width

2.13mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.23mm

Typical Gate Charge @ Vgs

49 nC @ 4.5 V nC

Height

0.17mm