onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23

RS Stock No.: 807-5201Brand: onsemiManufacturers Part No.: BSR58
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

8 to 80mA

Maximum Drain Source Voltage

0.4 V

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 0.97mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.97mm

Width

1.3mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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₹ 11.02

Each (In a Pack of 100) (Exc. GST)

₹ 13.004

Each (In a Pack of 100) (Including GST)

onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 11.02

Each (In a Pack of 100) (Exc. GST)

₹ 13.004

Each (In a Pack of 100) (Including GST)

onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
100 - 900₹ 11.02₹ 1,102.00
1000 - 2900₹ 8.66₹ 866.00
3000 - 8900₹ 8.44₹ 844.00
9000 - 23900₹ 8.33₹ 833.00
24000+₹ 8.23₹ 823.00

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

8 to 80mA

Maximum Drain Source Voltage

0.4 V

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 0.97mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.97mm

Width

1.3mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.