Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
2.7 A
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-60 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
P.O.A.
Each (Supplied as a Tape) (Exc. GST)
Standard
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

P.O.A.
Each (Supplied as a Tape) (Exc. GST)
Stock information temporarily unavailable.
Standard
50

Stock information temporarily unavailable.
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
2.7 A
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-60 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


