Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
150 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.45 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Country of Origin
China
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
₹ 3,358.00
₹ 33.58 Each (Supplied on a Reel) (Exc. GST)
₹ 3,962.44
₹ 39.624 Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
100
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 3,358.00
₹ 33.58 Each (Supplied on a Reel) (Exc. GST)
₹ 3,962.44
₹ 39.624 Each (Supplied on a Reel) (inc. GST)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 160 | ₹ 33.58 | ₹ 1,343.20 |
| 200 - 360 | ₹ 33.24 | ₹ 1,329.60 |
| 400+ | ₹ 32.91 | ₹ 1,316.40 |
Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
150 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.45 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Country of Origin
China
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


