P-Channel MOSFET, 225 mA, 200 V, 3-Pin SOT-223 Nexperia BSP220,115

RS Stock No.: 725-8379Brand: NexperiaManufacturers Part No.: BSP220,115
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Technical Document

Specifications

Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

225 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Transistor Material

Si

Height

1.7mm

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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P.O.A.

Each (In a Pack of 10) (Exc. GST)

P-Channel MOSFET, 225 mA, 200 V, 3-Pin SOT-223 Nexperia BSP220,115
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Available in multiples of 10.

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10

Available in multiples of 10
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70P.O.A.
80P.O.A.
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150P.O.A.
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

P.O.A.

Each (In a Pack of 10) (Exc. GST)

P-Channel MOSFET, 225 mA, 200 V, 3-Pin SOT-223 Nexperia BSP220,115

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

225 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Transistor Material

Si

Height

1.7mm

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more