Technical Documents
Specifications
Brand
MicrochipProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
12V
Package Type
TO-247
Series
MSC035SMA070B4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
8Ω
Maximum Power Dissipation Pd
1.6W
Typical Gate Charge Qg @ Vgs
99nC
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
2V
Forward Voltage Vf
1.8V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Stock information temporarily unavailable.
₹ 13,153.60
₹ 1,315.36 Each (Supplied in a Tube) (Exc. GST)
₹ 15,521.25
₹ 1,552.125 Each (Supplied in a Tube) (inc. GST)
Production pack (Tube)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 13,153.60
₹ 1,315.36 Each (Supplied in a Tube) (Exc. GST)
₹ 15,521.25
₹ 1,552.125 Each (Supplied in a Tube) (inc. GST)
Stock information temporarily unavailable.
Production pack (Tube)
10
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 95 | ₹ 1,315.36 | ₹ 6,576.80 |
| 100+ | ₹ 1,286.07 | ₹ 6,430.35 |
Technical Documents
Specifications
Brand
MicrochipProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
12V
Package Type
TO-247
Series
MSC035SMA070B4
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
8Ω
Maximum Power Dissipation Pd
1.6W
Typical Gate Charge Qg @ Vgs
99nC
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
2V
Forward Voltage Vf
1.8V
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.