Technical Document
Specifications
Brand
IXYSProduct Type
IGBT Module
Configuration
Single
Package Type
Y4-M5
Channel Type
Type N
Pin Count
7
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
34 mm
Length
94mm
Height
30mm
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
₹ 39,606.72
₹ 6,601.12 Each (In a Box of 6) (Exc. GST)
₹ 46,735.93
₹ 7,789.322 Each (In a Box of 6) (inc. GST)
6
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 39,606.72
₹ 6,601.12 Each (In a Box of 6) (Exc. GST)
₹ 46,735.93
₹ 7,789.322 Each (In a Box of 6) (inc. GST)
Stock information temporarily unavailable.
6

Technical Document
Specifications
Brand
IXYSProduct Type
IGBT Module
Configuration
Single
Package Type
Y4-M5
Channel Type
Type N
Pin Count
7
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
34 mm
Length
94mm
Height
30mm
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


