IXYS IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
188 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1150 W
Package Type
PLUS247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
50kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.34mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Country of Origin
United States
Product details
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₹ 55,947.90
₹ 1,864.93 Each (In a Tube of 30) (Exc. GST)
₹ 66,018.52
₹ 2,200.617 Each (In a Tube of 30) (inc. GST)
30
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 55,947.90
₹ 1,864.93 Each (In a Tube of 30) (Exc. GST)
₹ 66,018.52
₹ 2,200.617 Each (In a Tube of 30) (inc. GST)
30
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
188 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1150 W
Package Type
PLUS247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
50kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.34mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Country of Origin
United States
Product details
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products