N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P

RS Stock No.: 194-029Brand: IXYSManufacturers Part No.: IXFN80N50P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.2mm

Typical Gate Charge @ Vgs

195 nC @ 10 V

Width

25.07mm

Minimum Operating Temperature

-55 °C

Height

9.6mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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₹ 2,972.26

₹ 2,972.26 Each (Exc. GST)

₹ 3,507.27

₹ 3,507.27 Each (inc. GST)

N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 2,972.26

₹ 2,972.26 Each (Exc. GST)

₹ 3,507.27

₹ 3,507.27 Each (inc. GST)

N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.2mm

Typical Gate Charge @ Vgs

195 nC @ 10 V

Width

25.07mm

Minimum Operating Temperature

-55 °C

Height

9.6mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in