IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q

RS Stock No.: 920-0874Brand: IXYSManufacturers Part No.: IXFK27N80Q
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Q-Class

Package Type

TO-264AA

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.13mm

Transistor Material

Si

Number of Elements per Chip

1

Length

19.96mm

Typical Gate Charge @ Vgs

170 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

26.16mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Q Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

₹ 67,981.75

₹ 2,719.27 Each (In a Tube of 25) (Exc. GST)

₹ 80,218.47

₹ 3,208.739 Each (In a Tube of 25) (inc. GST)

IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 67,981.75

₹ 2,719.27 Each (In a Tube of 25) (Exc. GST)

₹ 80,218.47

₹ 3,208.739 Each (In a Tube of 25) (inc. GST)

IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q
Stock information temporarily unavailable.
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Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Q-Class

Package Type

TO-264AA

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.13mm

Transistor Material

Si

Number of Elements per Chip

1

Length

19.96mm

Typical Gate Charge @ Vgs

170 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

26.16mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Q Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more