Infineon IKZ50N65ES5XKSA1 IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 162-3289Brand: InfineonManufacturers Part No.: IKZ50N65ES5XKSA1
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Technical Document

Specifications

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

274 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3100pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.65mJ

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P.O.A.

Infineon IKZ50N65ES5XKSA1 IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

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P.O.A.

Infineon IKZ50N65ES5XKSA1 IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.
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Technical Document

Specifications

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

274 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3100pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.65mJ