Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1

RS Stock No.: 201-2809Brand: InfineonManufacturers Part No.: FF6MR12W2M1B11BOMA1
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

1200 V

Series

CoolSiC

Package Type

AG-EASY2B

Mounting Type

Screw Mount

Maximum Drain Source Resistance

0.00825 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.55V

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

P.O.A.

Each (In a Tray of 15) (Exc. GST)

Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

P.O.A.

Each (In a Tray of 15) (Exc. GST)

Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1

Stock information temporarily unavailable.

sticker-1112

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

1200 V

Series

CoolSiC

Package Type

AG-EASY2B

Mounting Type

Screw Mount

Maximum Drain Source Resistance

0.00825 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.55V

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more