Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO

RS Stock No.: 166-1188Brand: InfineonManufacturers Part No.: 6ED003L06F2XUMA1
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Technical Document

Specifications

Output Current

420 mA

Supply Voltage

17.5V

Pin Count

28

Package Type

DSO

Fall Time

45ns

Number of Outputs

6

Rise Time

100ns

Topology

Galvanic Isolated

High and Low Sides Dependency

Independent

Number of Drivers

6

Time Delay

800ns

Bridge Type

Full Bridge

Polarity

Non-Inverting

Mounting Type

Surface Mount

Country of Origin

Malaysia

Product details

EiceDRIVER 3-Phase Gate Drive IC, Infineon

3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.

Maximum blocking voltage 600V
Six independent drivers
Control via 3.3V logic
Under-voltage detection with hysteresis
Over-current detection

MOSFET & IGBT Drivers, Infineon (International Rectifier)

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P.O.A.

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

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P.O.A.

Infineon 6ED003L06F2XUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO
Stock information temporarily unavailable.
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Technical Document

Specifications

Output Current

420 mA

Supply Voltage

17.5V

Pin Count

28

Package Type

DSO

Fall Time

45ns

Number of Outputs

6

Rise Time

100ns

Topology

Galvanic Isolated

High and Low Sides Dependency

Independent

Number of Drivers

6

Time Delay

800ns

Bridge Type

Full Bridge

Polarity

Non-Inverting

Mounting Type

Surface Mount

Country of Origin

Malaysia

Product details

EiceDRIVER 3-Phase Gate Drive IC, Infineon

3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.

Maximum blocking voltage 600V
Six independent drivers
Control via 3.3V logic
Under-voltage detection with hysteresis
Over-current detection

MOSFET & IGBT Drivers, Infineon (International Rectifier)