Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
₹ 4,787.00
₹ 47.87 Each (Supplied as a Tape) (Exc. GST)
₹ 5,648.66
₹ 56.487 Each (Supplied as a Tape) (inc. GST)
Production pack (Tape)
100
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 4,787.00
₹ 47.87 Each (Supplied as a Tape) (Exc. GST)
₹ 5,648.66
₹ 56.487 Each (Supplied as a Tape) (inc. GST)
Stock information temporarily unavailable.
Production pack (Tape)
100
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 100 - 450 | ₹ 47.87 | ₹ 2,393.50 |
| 500 - 950 | ₹ 47.27 | ₹ 2,363.50 |
| 1000+ | ₹ 46.68 | ₹ 2,334.00 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details


