N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7

RS Stock No.: 146-0954Brand: DiodesZetexManufacturers Part No.: DMN10H099SFG-7
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

100 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.35mm

Typical Gate Charge @ Vgs

25.2 nC @ 10 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.77V

Country of Origin

China

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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₹ 33.66

Each (On a Reel of 2000) (Exc. GST)

₹ 39.719

Each (On a Reel of 2000) (Including GST)

N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

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₹ 33.66

Each (On a Reel of 2000) (Exc. GST)

₹ 39.719

Each (On a Reel of 2000) (Including GST)

N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

100 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.35mm

Typical Gate Charge @ Vgs

25.2 nC @ 10 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.77V

Country of Origin

China

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more