Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
₹ 86.84
Each (Supplied as a Tape) (Exc. GST)
₹ 102.471
Each (Supplied as a Tape) (inc. GST)
Production pack (Tape)
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 86.84
Each (Supplied as a Tape) (Exc. GST)
₹ 102.471
Each (Supplied as a Tape) (inc. GST)
Production pack (Tape)
1
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
10 - 40 | ₹ 86.84 | ₹ 868.40 |
50 - 90 | ₹ 84.36 | ₹ 843.60 |
100 - 240 | ₹ 82.01 | ₹ 820.10 |
250+ | ₹ 78.73 | ₹ 787.30 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details