N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S

RS Stock No.: 133-2796Brand: ToshibaManufacturers Part No.: TK11P65W,RQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₹ 397.10

₹ 79.42 Each (In a Pack of 5) (Exc. GST)

₹ 468.58

₹ 93.716 Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S

5

Available in multiples of 5
5₹ 397.10
10₹ 794.20
15₹ 1,191.30
20₹ 1,588.40
25₹ 1,897.75
30₹ 2,277.30
35₹ 2,656.85
40₹ 3,036.40
45₹ 3,415.95
50₹ 3,687.00
55₹ 4,055.70
60₹ 4,424.40
65₹ 4,793.10
70₹ 5,161.80
75₹ 5,530.50
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 397.10

₹ 79.42 Each (In a Pack of 5) (Exc. GST)

₹ 468.58

₹ 93.716 Each (In a Pack of 5) (inc. GST)

N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S
Stock information temporarily unavailable.

5

Available in multiples of 5
5₹ 397.10
10₹ 794.20
15₹ 1,191.30
20₹ 1,588.40
25₹ 1,897.75
30₹ 2,277.30
35₹ 2,656.85
40₹ 3,036.40
45₹ 3,415.95
50₹ 3,687.00
55₹ 4,055.70
60₹ 4,424.40
65₹ 4,793.10
70₹ 5,161.80
75₹ 5,530.50

Buy in bulk

quantityUnit pricePer Pack
5 - 20₹ 79.42₹ 397.10
25 - 45₹ 75.91₹ 379.55
50 - 245₹ 73.74₹ 368.70
250 - 495₹ 71.69₹ 358.45
500+₹ 68.83₹ 344.15

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.1mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more