Technical Document
Specifications
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Product details
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
Please check again later.
₹ 30.59
Each (Supplied on a Reel) (Exc. GST)
₹ 36.096
Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 30.59
Each (Supplied on a Reel) (Exc. GST)
₹ 36.096
Each (Supplied on a Reel) (inc. GST)
Production pack (Reel)
10
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Product details
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.