Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
Please check again later.
₹ 99.79
Each (In a Pack of 5) (Exc. GST)
₹ 117.752
Each (In a Pack of 5) (Including GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 99.79
Each (In a Pack of 5) (Exc. GST)
₹ 117.752
Each (In a Pack of 5) (Including GST)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₹ 99.79 | ₹ 498.95 |
25 - 95 | ₹ 86.00 | ₹ 430.00 |
100 - 245 | ₹ 69.40 | ₹ 347.00 |
250 - 495 | ₹ 67.71 | ₹ 338.55 |
500+ | ₹ 65.32 | ₹ 326.60 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details