Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N
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P.O.A.
onsemi NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole
1
Imported by:
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
onsemi NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole
Stock information temporarily unavailable.
1
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N