Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4.5 V dc
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
15.75mm
Width
4.82mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.28mm
Country of Origin
China
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
50
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4.5 V dc
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
15.75mm
Width
4.82mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.28mm
Country of Origin
China
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.