Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
192 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
14.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.5 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
25.07mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
38.23mm
Typical Gate Charge @ Vgs
268 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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Please check again later.
₹ 3,837.35
Each (In a Tube of 10) (Exc. GST)
₹ 4,528.073
Each (In a Tube of 10) (inc. GST)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 3,837.35
Each (In a Tube of 10) (Exc. GST)
₹ 4,528.073
Each (In a Tube of 10) (inc. GST)
10
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
192 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
14.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.5 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
25.07mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
38.23mm
Typical Gate Charge @ Vgs
268 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS