Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
2.4mm
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
₹ 745.00
₹ 74.50 Each (In a Pack of 10) (Exc. GST)
₹ 879.10
₹ 87.91 Each (In a Pack of 10) (inc. GST)
Standard
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 745.00
₹ 74.50 Each (In a Pack of 10) (Exc. GST)
₹ 879.10
₹ 87.91 Each (In a Pack of 10) (inc. GST)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
2.4mm
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.