Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-268
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Length
16.05mm
Width
14mm
Height
5.1mm
Dimensions
16.05 x 14 x 5.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
₹ 798.37
₹ 798.37 Each (Exc. GST)
₹ 942.08
₹ 942.08 Each (inc. GST)
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 798.37
₹ 798.37 Each (Exc. GST)
₹ 942.08
₹ 942.08 Each (inc. GST)
1
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Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-268
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Length
16.05mm
Width
14mm
Height
5.1mm
Dimensions
16.05 x 14 x 5.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.