Diodes Inc Dual N/P-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK DMG4511SK4-13
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
6.2mm
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.39mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₹ 98,175.00
₹ 39.27 Each (On a Reel of 2500) (Exc. GST)
₹ 115,846.50
₹ 46.339 Each (On a Reel of 2500) (inc. GST)
2500
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 98,175.00
₹ 39.27 Each (On a Reel of 2500) (Exc. GST)
₹ 115,846.50
₹ 46.339 Each (On a Reel of 2500) (inc. GST)
2500
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
9.3 A, 9.6 A
Maximum Drain Source Voltage
35 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.9 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Width
6.2mm
Length
6.7mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V, 19.2 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.39mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products