STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

RS Stock No.: 168-7533Brand: STMicroelectronicsManufacturers Part No.: STW34NM60N
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

84 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₹ 11,826.30

₹ 394.21 Each (In a Tube of 30) (Exc. GST)

₹ 13,955.03

₹ 465.168 Each (In a Tube of 30) (inc. GST)

STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 11,826.30

₹ 394.21 Each (In a Tube of 30) (Exc. GST)

₹ 13,955.03

₹ 465.168 Each (In a Tube of 30) (inc. GST)

STMicroelectronics MDmesh N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N
Stock information temporarily unavailable.
sticker-1112

Stock information temporarily unavailable.

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quantityUnit pricePer Tube
30 - 60₹ 394.21₹ 11,826.30
90 - 480₹ 378.01₹ 11,340.30
510 - 960₹ 367.93₹ 11,037.90
990+₹ 358.38₹ 10,751.40

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Length

15.75mm

Typical Gate Charge @ Vgs

84 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.15mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more