STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.75mm
Forward Diode Voltage
1.6V
Country of Origin
China
Product details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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₹ 927.15
₹ 185.43 Each (In a Pack of 5) (Exc. GST)
₹ 1,094.04
₹ 218.807 Each (In a Pack of 5) (inc. GST)
Standard
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 927.15
₹ 185.43 Each (In a Pack of 5) (Exc. GST)
₹ 1,094.04
₹ 218.807 Each (In a Pack of 5) (inc. GST)
Standard
5
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Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₹ 185.43 | ₹ 927.15 |
| 25 - 45 | ₹ 170.91 | ₹ 854.55 |
| 50 - 120 | ₹ 166.53 | ₹ 832.65 |
| 125 - 245 | ₹ 164.42 | ₹ 822.10 |
| 250+ | ₹ 162.36 | ₹ 811.80 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.75mm
Forward Diode Voltage
1.6V
Country of Origin
China
Product details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products