Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
880 W
Number of Elements per Chip
2
Width
45.6mm
Length
122mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Height
17mm
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
₹ 62,783.46
₹ 62,783.46 Each (Exc. GST)
₹ 74,084.48
₹ 74,084.48 Each (inc. GST)
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 62,783.46
₹ 62,783.46 Each (Exc. GST)
₹ 74,084.48
₹ 74,084.48 Each (inc. GST)
1
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Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
880 W
Number of Elements per Chip
2
Width
45.6mm
Length
122mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Height
17mm
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature