onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G

RS Stock No.: 121-6305Brand: onsemiManufacturers Part No.: NTJD4001NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.72 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

₹ 27,630.00

₹ 9.21 Each (On a Reel of 3000) (Exc. GST)

₹ 32,603.40

₹ 10.868 Each (On a Reel of 3000) (inc. GST)

onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

₹ 27,630.00

₹ 9.21 Each (On a Reel of 3000) (Exc. GST)

₹ 32,603.40

₹ 10.868 Each (On a Reel of 3000) (inc. GST)

onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G
Stock information temporarily unavailable.
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Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.72 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more