Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
500 V
Series
HiperFET
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
270 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.13mm
Transistor Material
Si
Height
26.16mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
₹ 66,480.00
₹ 2,659.20 Each (In a Tube of 25) (Exc. GST)
₹ 78,446.40
₹ 3,137.856 Each (In a Tube of 25) (inc. GST)
25
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 66,480.00
₹ 2,659.20 Each (In a Tube of 25) (Exc. GST)
₹ 78,446.40
₹ 3,137.856 Each (In a Tube of 25) (inc. GST)
25

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Please check again later.
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
500 V
Series
HiperFET
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
270 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.13mm
Transistor Material
Si
Height
26.16mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS