Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
150 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.3mm
Length
16.26mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
21.46mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
₹ 22,543.80
₹ 751.46 Each (In a Tube of 30) (Exc. GST)
₹ 26,601.68
₹ 886.723 Each (In a Tube of 30) (inc. GST)
30
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 22,543.80
₹ 751.46 Each (In a Tube of 30) (Exc. GST)
₹ 26,601.68
₹ 886.723 Each (In a Tube of 30) (inc. GST)
30

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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
150 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
600 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.3mm
Length
16.26mm
Typical Gate Charge @ Vgs
150 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
21.46mm
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS