Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₹ 590.90
₹ 118.18 Each (In a Pack of 5) (Exc. GST)
₹ 697.26
₹ 139.452 Each (In a Pack of 5) (inc. GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 590.90
₹ 118.18 Each (In a Pack of 5) (Exc. GST)
₹ 697.26
₹ 139.452 Each (In a Pack of 5) (inc. GST)
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₹ 118.18 | ₹ 590.90 |
| 25 - 45 | ₹ 79.16 | ₹ 395.80 |
| 50 - 120 | ₹ 76.81 | ₹ 384.05 |
| 125 - 245 | ₹ 74.77 | ₹ 373.85 |
| 250+ | ₹ 72.45 | ₹ 362.25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products