Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A

RS Stock No.: 827-4883PBrand: Texas InstrumentsManufacturers Part No.: CSD18504Q5A
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

₹ 3,492.00

₹ 69.84 Each (Supplied on a Reel) (Exc. GST)

₹ 4,120.56

₹ 82.411 Each (Supplied on a Reel) (inc. GST)

Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A
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RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 3,492.00

₹ 69.84 Each (Supplied on a Reel) (Exc. GST)

₹ 4,120.56

₹ 82.411 Each (Supplied on a Reel) (inc. GST)

Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Reel
50 - 100₹ 69.84₹ 1,746.00
125 - 225₹ 69.14₹ 1,728.50
250+₹ 68.45₹ 1,711.25

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more