Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
325 A
Maximum Drain Source Voltage
1700 V
Package Type
Half Bridge
Mounting Type
Screw Mount
Pin Count
7
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
1.76 kW
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Transistor Material
SiC
Width
61.4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
106.4mm
Typical Gate Charge @ Vgs
1076 nC @ 20 V, 1076 nC @ 5 V
Height
30mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
2.5V
Product details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
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Please check again later.
₹ 99,167.78
Each (Exc. GST)
₹ 117,017.98
Each (Including GST)
1
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 99,167.78
Each (Exc. GST)
₹ 117,017.98
Each (Including GST)
1
Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
325 A
Maximum Drain Source Voltage
1700 V
Package Type
Half Bridge
Mounting Type
Screw Mount
Pin Count
7
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
1.76 kW
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Transistor Material
SiC
Width
61.4mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
106.4mm
Typical Gate Charge @ Vgs
1076 nC @ 20 V, 1076 nC @ 5 V
Height
30mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
2.5V
Product details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements