Vishay TrenchFET P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 SI3477DV-T1-GE3

RS Stock No.: 812-3160PBrand: VishayManufacturers Part No.: SI3477DV-T1-GE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Series

TrenchFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

₹ 857.00

₹ 42.85 Each (Supplied on a Reel) (Exc. GST)

₹ 1,011.26

₹ 50.563 Each (Supplied on a Reel) (inc. GST)

Vishay TrenchFET P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 SI3477DV-T1-GE3
Select packaging type
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 857.00

₹ 42.85 Each (Supplied on a Reel) (Exc. GST)

₹ 1,011.26

₹ 50.563 Each (Supplied on a Reel) (inc. GST)

Vishay TrenchFET P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 SI3477DV-T1-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Series

TrenchFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more