Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₹ 10,557.50
₹ 211.15 Each (Supplied in a Tube) (Exc. GST)
₹ 12,457.85
₹ 249.157 Each (Supplied in a Tube) (inc. GST)
Production pack (Tube)
50
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 10,557.50
₹ 211.15 Each (Supplied in a Tube) (Exc. GST)
₹ 12,457.85
₹ 249.157 Each (Supplied in a Tube) (inc. GST)
Stock information temporarily unavailable.
Production pack (Tube)
50
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 100 | ₹ 211.15 | ₹ 5,278.75 |
125 - 225 | ₹ 209.04 | ₹ 5,226.00 |
250+ | ₹ 206.95 | ₹ 5,173.75 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details