N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK Vishay Siliconix SQM40016EM_GE3

RS Stock No.: 178-3723Brand: Vishay SiliconixManufacturers Part No.: SQM40016EM_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

163 nC @ 10 V

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Country of Origin

Taiwan, Province Of China

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P.O.A.

N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK Vishay Siliconix SQM40016EM_GE3

800

Available in multiples of 1
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

sticker-1112

P.O.A.

N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK Vishay Siliconix SQM40016EM_GE3
Stock information temporarily unavailable.

800

Available in multiples of 1
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.
sticker-1112

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

163 nC @ 10 V

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Country of Origin

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more