Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Stock information temporarily unavailable.
Please check again later.
₹ 1,336.95
₹ 267.39 Each (In a Pack of 5) (Exc. GST)
₹ 1,577.60
₹ 315.52 Each (In a Pack of 5) (inc. GST)
5
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 1,336.95
₹ 267.39 Each (In a Pack of 5) (Exc. GST)
₹ 1,577.60
₹ 315.52 Each (In a Pack of 5) (inc. GST)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₹ 267.39 | ₹ 1,336.95 |
25 - 45 | ₹ 246.25 | ₹ 1,231.25 |
50 - 120 | ₹ 194.84 | ₹ 974.20 |
125 - 245 | ₹ 188.46 | ₹ 942.30 |
250+ | ₹ 183.62 | ₹ 918.10 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details