Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Country of Origin
Japan
Product details
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
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Please check again later.
₹ 18.65
Each (In a Pack of 30) (Exc. GST)
₹ 22.007
Each (In a Pack of 30) (inc. GST)
30
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 18.65
Each (In a Pack of 30) (Exc. GST)
₹ 22.007
Each (In a Pack of 30) (inc. GST)
30
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
30 - 120 | ₹ 18.65 | ₹ 559.50 |
150+ | ₹ 17.70 | ₹ 531.00 |
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Height
0.8mm
Country of Origin
Japan
Product details