STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N

RS Stock No.: 761-2751PBrand: STMicroelectronicsManufacturers Part No.: STF13NM60N
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

30 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₹ 219.11

₹ 219.11 Each (Supplied in a Tube) (Exc. GST)

₹ 258.55

₹ 258.55 Each (Supplied in a Tube) (inc. GST)

STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 219.11

₹ 219.11 Each (Supplied in a Tube) (Exc. GST)

₹ 258.55

₹ 258.55 Each (Supplied in a Tube) (inc. GST)

STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

30 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in