Technical Document
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
240 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Product details
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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₹ 78.31
Each (Supplied in a Bag) (Exc. GST)
₹ 92.406
Each (Supplied in a Bag) (Including GST)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 78.31
Each (Supplied in a Bag) (Exc. GST)
₹ 92.406
Each (Supplied in a Bag) (Including GST)
10
Buy in bulk
quantity | Unit price | Per Bag |
---|---|---|
30 - 70 | ₹ 78.31 | ₹ 2,349.30 |
100+ | ₹ 67.77 | ₹ 2,033.10 |
Technical Document
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
240 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Product details
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.