N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH

RS Stock No.: 871-4895Brand: MagnaChipManufacturers Part No.: MDD1501RH
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

44.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

2.39mm

Country of Origin

Korea, Republic Of

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH
Select packaging type
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

P.O.A.

N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

44.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

2.39mm

Country of Origin

Korea, Republic Of

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more