Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
2.1 kW
Package Type
SimBus F
Configuration
Dual
Mounting Type
PCB Mount
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
152 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Country of Origin
Germany
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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₹ 19,568.46
Each (In a Box of 3) (Exc. GST)
₹ 23,090.783
Each (In a Box of 3) (Including GST)
3
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
₹ 19,568.46
Each (In a Box of 3) (Exc. GST)
₹ 23,090.783
Each (In a Box of 3) (Including GST)
3
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
2.1 kW
Package Type
SimBus F
Configuration
Dual
Mounting Type
PCB Mount
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
152 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Country of Origin
Germany
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.