Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
500 V
Series
Linear
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.2mm
Typical Gate Charge @ Vgs
260 nC @ 15 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.6mm
Country of Origin
United States
Product details
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
₹ 48,940.70
₹ 4,894.07 Each (In a Tube of 10) (Exc. GST)
₹ 57,750.03
₹ 5,775.003 Each (In a Tube of 10) (inc. GST)
10
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 48,940.70
₹ 4,894.07 Each (In a Tube of 10) (Exc. GST)
₹ 57,750.03
₹ 5,775.003 Each (In a Tube of 10) (inc. GST)
10

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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
500 V
Series
Linear
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.2mm
Typical Gate Charge @ Vgs
260 nC @ 15 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.6mm
Country of Origin
United States
Product details
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS