IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXFN140N30P

RS Stock No.: 193-739Brand: IXYSManufacturers Part No.: IXFN140N30P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

300 V

Package Type

SOT-227

Series

HiperFET, Polar

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

185 nC @ 10 V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

₹ 3,513.19

₹ 3,513.19 Each (Exc. GST)

₹ 4,145.56

₹ 4,145.56 Each (inc. GST)

IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXFN140N30P
Select packaging type
Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 3,513.19

₹ 3,513.19 Each (Exc. GST)

₹ 4,145.56

₹ 4,145.56 Each (inc. GST)

IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXFN140N30P
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

300 V

Package Type

SOT-227

Series

HiperFET, Polar

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

185 nC @ 10 V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more