Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
1000 V
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
890 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
20.29mm
Typical Gate Charge @ Vgs
250 nC @ 10 V
Width
5.31mm
Number of Elements per Chip
1
Height
26.59mm
Series
HiperFET, Q-Class
Minimum Operating Temperature
-55 °C
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RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301
P.O.A.
1
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
1000 V
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
890 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
20.29mm
Typical Gate Charge @ Vgs
250 nC @ 10 V
Width
5.31mm
Number of Elements per Chip
1
Height
26.59mm
Series
HiperFET, Q-Class
Minimum Operating Temperature
-55 °C