Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF

RS Stock No.: 543-0052Brand: VishayManufacturers Part No.: IRF620PBFDistrelec Article No.: 17115009
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRF620 5.2A 200V
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N-channel MOSFET,IRF620 6A 200V
P.O.A.Each (In a Pack of 5) (Exc. GST)

₹ 74.39

₹ 74.39 Each (Exc. GST)

₹ 87.78

₹ 87.78 Each (inc. GST)

Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF
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Imported by:

RS Components & Controls (I) Ltd

Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 74.39

₹ 74.39 Each (Exc. GST)

₹ 87.78

₹ 87.78 Each (inc. GST)

Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF

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Select packaging type

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QuantityUnit price
1 - 9₹ 74.39
10 - 49₹ 73.65
50 - 99₹ 72.91
100 - 249₹ 72.18
250+₹ 71.46

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  • Download 3D Models, Schematics and Footprints from more than a million products
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You may be interested in
N-channel MOSFET,IRF620 5.2A 200V
P.O.A.Each (Exc. GST)
N-channel MOSFET,IRF620 6A 200V
P.O.A.Each (In a Pack of 5) (Exc. GST)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRF620 5.2A 200V
P.O.A.Each (Exc. GST)
N-channel MOSFET,IRF620 6A 200V
P.O.A.Each (In a Pack of 5) (Exc. GST)