Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Country of Origin
Japan
Product details
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
₹ 7,588.00
₹ 303.52 Each (In a Tube of 25) (Exc. GST)
₹ 8,953.84
₹ 358.154 Each (In a Tube of 25) (inc. GST)
25
RS Components & Controls (I) Ltd
Distribution hub - B-89, Sector 67, Noida, Gautam Budh Nagar, (Uttar Pradesh), 201 301

₹ 7,588.00
₹ 303.52 Each (In a Tube of 25) (Exc. GST)
₹ 8,953.84
₹ 358.154 Each (In a Tube of 25) (inc. GST)
25

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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Country of Origin
Japan
Product details